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Magazine Name : Ieee Transactions On Electron Devices

Year : 2002 Volume number : 49 Issue: 05

Temperature-Dependent Nonlinearities In Gan/Aigan Hemts (Article)
Subject: Compound Semiconductor Devices
Author: S Islam     
page:      710 - 717
Implementation And Characterization Of Self-Aligned Double-Gate Tft With Thin Channel And Thick Source/Drain (Article)
Subject: Compound Semiconductor Devices
Author: S Zhang     
page:      718 - 724
Comparison Of Dc High-Frequency Performance Of Zinc-Doped And Carbon-Doped Inp/Ingaas Hbts Grown By Metalorganic Chemical Vapor Deposition (Article)
Subject: Compound Semiconductor Devices
Author: D Cui     
page:      725 - 732
Evaluation Of Cvd/Pvd Multilayered Seed For Electrochemical Deposition Of Cu-Damascene Interconnects (Article)
Subject: Materials Processing And Packaging
Author: A Furuya     
page:      733 - 738
Hci-Free Selective Epitaxial Si-Ge Growth By Lpcvd For High-Frequency Hbts (Article)
Subject: Materials Processing And Packaging
Author: T Kiyota     
page:      739 - 745
A Numerical Analysis Of A Cmos Image Sensor With A Simple Fixed-Pattern-Noise-Reduction Technology (Article)
Subject: Materials Processing And Packaging
Author: K Yonemoto     
page:      746 - 753
Analytical Charge Collection And Mtf Model For Photodiode-Based Cmos Imagers (Article)
Subject: Materials Processing And Packaging
Author: C.-S.S Lin     
page:      754 - 761
A New Mixed-Mode Sustain Method To Improve The Luminous Efficiency Of Alternating Current Plasma Display Panels (Article)
Subject: Materials Processing And Packaging
Author: S-T Lo     
page:      762 - 769
Gain-Bandwidth Characteristics Of Thin Avalanche Photodiodes (Article)
Subject: Materials Processing And Packaging
Author: M M Hayat     
page:      770 - 781
A Modified Ramp Waveform To Reduce Reset Period In Ac Plasma Display Panel (Article)
Subject: Materials Processing And Packaging
Author: C. H Park     
page:      782 - 786
Damage Generation And Location In N- And P- Mosfets Biased In The Substrate-Enhanced Gate Current Regime (Article)
Subject: Channel Hot Carrier , Damage Profiling
Author: F. Driussi     
page:      787 - 794
Design Methodology Of The High Performance Large-Grain Polysilicon Mosfet (Article)
Subject: Design Methodology , Grain Boundaries
Author: Singh Jagar     
page:      795 - 801
A Novel Nonvolatile Memory Cell Suitable For Both Flash And Byte-Wirable Applications (Article)
Subject: Disturbs , Eprom
Author: John M. Caywood     
page:      802 - 807
Speed Superioty Of Scaled Double -Gate Cmos (Article)
Subject: Cmos Modeling , Double-Gate
Author: Jerry G Fossum     
page:      808 - 811
Modeling Of The Reverse Characteristics Of A- Si: H Tfts (Article)
Subject: Amorphous Powder
Author: Peyman Servati     
page:      812 - 819
High-Quality Polycrystalline Si Tfts Fabricated On Stainless-Steel Foils Using Sputtered Si Films (Article)
Subject: Low-Temperature , Polycrystalline
Author: Serikawa Tabashi     
page:      820 - 825
The Effect Of High-K Gate Dieelectrics On Deep Submicrometer Cmos Device And Circuit Performance (Article)
Subject: Circuit Simulation
Author: N.R. Moahpatra     
page:      826 - 831
Models For Subthreshold And Above-Threshold Currents In 0.1-Um Pocket N-Mosfets For Low-Voltage Applications (Article)
Subject: Drift
Author: S. -S. Pang     
page:      832 - 839
Downscaling Limit Of Equivqlent Oxide Thickness In Formation Of Ultrathin Gate Dielectric By Thermal-Enhanced Remote Plasmanitridation (Article)
Subject: Radical-Induced Re-Oxidation
Author: C.-H. Chen     
page:      840 - 846
Size Dependence Of The Magnetic And Electrical Properties Of The Spin Valvetransistor (Article)
Subject: Hot Electron , Magnetic Devices
Author: S.B Kim     
page:      847 - 851
Low-Power High-Performance Double-Gate Fully Depleted Soi Circuit Design (Article)
Subject: Circuit Design , Cmos
Author: Q Zhang     
page:      852 - 862
The Correlation Resistance For Low-Frequency Noise Compact Modeling Of Si/Sige Hbts (Article)
Subject: Heterojunctions
Author: Matia Borgarini     
page:      863 - 870
Impact Of Pad And Gate Parasitics On Small-Signal And Noise Modeling Of 0.35 Um Gate Length Mos Transistors (Article)
Subject: Mosfets , Noise , Scattering , Small - Signal
Author: Paulis Sakalas     
page:      871 - 880
Linearity And Low -Noise Performance Of Soi Mosfets For Rf Applications (Article)
Subject: Cmos , Linearity , Lan 'S / Man 'S / Wan'S
Author: L. F. C Alberto     
page:      881 - 888
Quantum C-V Modeling In Depletion And Inversion: Accurate Extraction Of Electrical Thickness Of Gate Oxide In Deep Submicron Mosfets (Article)
Subject: Electrical Gate Oxide , Quantum Dots
Author: R Quan     
page:      889 - 894
A High-Voltage Monolithic Isolator For A Communication Network Interface (Article)
Subject: High-Voltage Laboratory
Author: Takachio Noboru     
page:      895 - 901
Optimal Design For A Thermally Stable Multifinger Power Transistor (Article)
Subject: Ballasting Resistor
Author: Sam S.C Liao     
page:      902 - 908
Optimum Design Hfor A Thermally Stable Multifinger Power Transistor With Temperature-Dependent Thermal Conductivity (Article)
Subject: Couple Stess
Author: Sam S.C Liao     
page:      909 - 915
Modeling Of The Coolmostm Transistor -Part 1: Device Physic (Article)
Subject: Mosfet (Metal Oxide-Semiconductor Field-Effect Transister
Author: David E. Daniel     
page:      916 - 922
Modeling Of The Coolmostm Transistor-Part Ii: Dc Model And Parmeter Extraction (Article)
Subject: Coolmos Model , Coolmos Parameters
Author: D Daniel     
page:      923 - 929
Uncooled Infrared Microbolometerson A Flexible Substrate (Article)
Subject: Bolometers
Author: Alp Yaradanakul     
page:      930 - 932
A Simple Method For Optimization Of 6h-Sic Punch Throughjunctions Used In Both Unipolar Gand Bopolart Power Devices (Article)
Subject: Bipolar
Author: J. Wang     
page:      933 - 939
Substrate And Epitaxial Issues For Sic Power Devices (Article)
Subject: Bulk Growth
Author: N.K. Spencer     
page:      940 - 944
Experimental Verification Of The Dependence Of Bipolar Transistor Flicker Noise On Power Dissipation (Article)
Subject: Bipolar Transistor
Author: L. Forbes     
page:      945 - 946
4h-Sic Rectifiers With Dual Metal Planar Schottky Contacts (Article)
Subject: Barrier
Author: S Vassiliadis     
page:      947 - 949
High Stable Hydrogenated Amorphous Silicon Gernanium Solar Cells (Article)
Subject: Amorphous Magnetic Materials.
Author: M Gordan     
page:      949 - 952